SiC power electronic devices will play a more and more important role in improving the efficiency of power utilization and realizing the miniaturization of power electronic devices. SiC power electronic devices can improve the efficiency of power utilization to reduce power loss, because compared with silicon devices, SiC devices have advantages in reducing on-resistance and switching loss. For example, by the diode and switch composed of the inverter circuit, only the diode material by silicon silicon carbide, inverter power loss can be reduced about 15 ~ 30%, if the switch material is also changed into SiC, the power loss can be reduced by more than half. Power electronics devices made from silicon carbide have three characteristics that enable power converters to be miniaturized: higher switching speeds, lower losses, and higher operating temperatures. Silicon carbide devices can switch on and off several times faster than silicon devices. The higher the switching frequency, the easier it is to miniaturize energy storage and filtering components such as inductors and capacitors; The power loss is reduced, and the heat will be reduced accordingly, so the power converter can be miniaturized. In terms of junction temperature, silicon devices reach the limit at 200°C, while silicon carbide devices can operate at higher junction temperature and ambient temperature, thus reducing or eliminating the cooling mechanism of the power converter.

In the field of the application of power electronic devices, such as transmission system and distribution system, electric locomotive, hybrid cars, all kinds of industrial motors, pv inverter, wind power grid inverter, air conditioning and other white goods, servers and personal computers, such as silicon carbide device will gradually show its performance and reduce the system cost advantage. As the main direction of the next generation of power electronics devices, silicon carbide power electronics devices will bring important technological innovations to power electronics and drive the development of power electronics in the next 20 to 30 years.